Search results for "BUFFER LAYER"
showing 4 items of 4 documents
THIN ZNS FILMS OBTAINED BY ELECTRODEPOSITION AS BUFFER FOR SOLAR CELLS
2011
Large Area Deposition by Radio Frequency Sputtering of Gd0.1Ce0.9O1.95 Buffer Layers in Solid Oxide Fuel Cells: Structural, Morphological and Electro…
2021
We investigate the influence of position, under large circular sputtering targets, on the final electrochemical performance of 35 mm diameter button solid oxide fuel cells with sputter-deposited Gadolinium doped Ceria barrier layers, positioned in order to almost cover the entirety of the area associated with a 120 × 80 mm2 industrial cell. We compare the results obtained via structural and morphological analysis to the Electrochemical Impedance Spectroscopy (EIS) measurements performed on the button cells, disentangling the role of different parameters. The Atomic Force Microscopy analysis makes it possible to observe a decrease in the roughness values from the peripheral to the central zo…
Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy.
2006
Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford backscattering spectrometry. Higher Cd contents lead to the coexistence of Zn1−xCdxO alloys of different compositions within the same film. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.93 eV for the highest Cd concentration (8.5 at. %). The lattice deformation, due to Cd incorporation, has been described using a n…
Properties of atomic layer deposited nanolaminates of zirconium and cobalt oxides
2018
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